Method for forming a salicide layer
US8598033B1 · kind B1 · utility
2Cited by
4References
13Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Oct 7, 2012 |
| Grant date | Dec 3, 2013 |
| Priority date | — |
| Expiry date | Oct 7, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76855
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The present invention provides a method for forming a salicide layer. First, a metal-atom-containing layer is formed on a substrate, a first rapid thermal process (RTP) is then performed to the metal-atom-containing layer to form a transitional salicide layer on a specific region. The metal-atom-containing layer is then removed, a thermal conductive layer is formed on the surface of the transitional salicide layer, and a second RTP is performed on the transitional salicide layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.