Barrier layer removal method and apparatus
US8598039B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 20, 2008 |
| Grant date | Dec 3, 2013 |
| Priority date | — |
| Expiry date | Apr 12, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/67075
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
This invention relates to a method and apparatus by integrating semiconductor manufacturing processes of stress free electrochemical copper polishing (SFP), removal of the Tantalum oxide or Titanium oxide formed during SFP process and XeF2 gas phase etching barrier layer Ta/TaN or Ti/TiN process. Firstly, at least portion of plated copper film is polished by SFP. Secondly the barrier metal oxide film formed during SFP process is etched away by etchant. Finally, the barrier layer Ta/TaN or Ta/TiN is removed with XeF2 gas phase etching. The apparatus accordingly consists of three sub systems: stress free copper electropolishing system, barrier layer oxide film removal system and barrier layer Ta/TaN or Ti/TiN gas phase etching system.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.