Semiconductor device and method for manufacturing a semiconductor device

US8598655B1 · kind B1 · utility

Assignee

• Infineon Technologies Dresden GmbH & Co. KG · DE

Inventors

• Till Schloesser · Dresden, DE
• Rolf Weis · Dresden, DE
• Ralf Rudolf · Dresden, DE

Key dates

• Filing date: Aug 3, 2012
• Grant date: Dec 3, 2013
• Expiry date: Aug 3, 2032

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D64/516

Abstract

A semiconductor device includes a first transistor with a first drift zone, and a plurality of second transistors, each second transistor comprising a source region, a drain region and a gate electrode. The second transistors are electrically coupled in series to form a series circuit that is electrically coupled to the first transistor, the first and the plurality of second transistors being at least partially disposed in a semiconductor substrate including a buried doped layer, wherein the source or the drain regions of the second transistors are disposed in the buried doped layer.