Isolation structure profile for gap filling
US8598675B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Feb 10, 2011 |
| Grant date | Dec 3, 2013 |
| Priority date | — |
| Expiry date | Feb 10, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76232
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
An trench isolation structure and method for manufacturing the trench isolation structure are disclosed. An exemplary trench isolation structure includes a first portion and a second portion. The first portion extends from a surface of a semiconductor substrate to a first depth in the semiconductor substrate, and has a width that tapers from a first width at the surface of the semiconductor substrate to a second width at the first depth, the first width being greater than the second width. The second portion extends from the first depth to a second depth in the semiconductor substrate, and has substantially the second width from the first depth to the second depth.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.