Active thermal control for stacked IC devices
US8598700B2 · kind B2 · utility
5Cited by
7References
25Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jun 27, 2008 |
| Grant date | Dec 3, 2013 |
| Priority date | — |
| Expiry date | Jun 20, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/00014
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Thermal conductivity in a stacked IC device can be improved by constructing one or more active temperature control devices within the stacked IC device. In one embodiment, the control devices are thermal electric (TE) devices, such as Peltier devices. The TE devices can then be selectively controlled to remove or add heat, as necessary, to maintain the stacked IC device within a defined temperature range. The active temperature control elements can be P-N junctions created in the stacked IC device and can serve to move the heat laterally and/or vertically, as desired.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.