Programming method for NAND flash memory device to reduce electrons in channels
US8599614B2 · kind B2 · utility
18Cited by
9References
14Claims
0Family size
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Key dates
| Filing date | Apr 30, 2009 |
| Grant date | Dec 3, 2013 |
| Priority date | — |
| Expiry date | Jan 13, 2030 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B41/35
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
In a programming method for a NAND flash memory device, a self-boosting scheme is used to eliminate excess electrons in the channel of an inhibit cell string that would otherwise cause programming disturb. The elimination is enabled by applying a negative voltage to word lines connected to the inhibit cell string before boosting the channel, and this leads to bringing high program immunity. A row decoder circuitry to achieve the programming operation and a file system architecture based on the programming scheme to improve the efficiency of file management are also described.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.