Geometric pattern data quality verification for maskless lithography
US8601407B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 25, 2011 |
| Grant date | Dec 3, 2013 |
| Priority date | — |
| Expiry date | Aug 25, 2031 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03F7/2059
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
Provided is a method of performing a maskless lithography process. The method includes providing a proximity correction pattern. The method includes generating a deformed pattern based on the proximity correction pattern. The method includes performing a first convolution process to the proximity correction pattern to generate a first proximity correction pattern contour. The method includes processing the first proximity correction pattern contour to generate a second proximity correction pattern contour. The method includes performing a second convolution process to the deformed pattern to generate a first deformed pattern contour. The method includes processing the first deformed pattern contour to generate a second deformed pattern contour. The method includes identifying mismatches between the second proximity correction pattern contour and the second deformed pattern contour. The method includes determining whether the deformed pattern is lithography-ready in response to the identifying.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.