Enhanced etch and deposition profile control using plasma sheath engineering
US8603591B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 23, 2009 |
| Grant date | Dec 10, 2013 |
| Priority date | — |
| Expiry date | Feb 4, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J2237/3345
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A plasma processing tool is used to deposit material on a workpiece. For example, a method for conformal deposition of material is disclosed. In this embodiment, the plasma sheath shape is modified to allow material to impact the workpiece at a range of incident angles. By varying this range of incident angles over time, a variety of different features can be deposited onto. In another embodiment, a plasma processing tool is used to etch a workpiece. In this embodiment, the plasma sheath shape is altered to allow ions to impact the workpiece at a range of incident angles. By varying this range of incident angles over time, a variety of differently shaped features can be created.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.