Variable-resistance material memories, processes of forming same, and methods of using same
US8603888B2 · kind B2 · utility
180Cited by
6References
40Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Jan 11, 2013 |
| Grant date | Dec 10, 2013 |
| Priority date | — |
| Expiry date | Jan 11, 2033 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C2213/75
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A variable-resistance material memory array includes a series of variable-resistance material memory cells. The series of variable-resistance material memory cells can be arranged in parallel with a corresponding series of control gates. A select gate can also be disposed in series with the variable-resistance material memory cells. Writing/reading/erasing to a given variable-resistance material memory cell can include turning off the corresponding control gate, while turning on all other control gates. Various devices can include such a variable-resistance material memory array.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.