Method of manufacturing a semiconductor device
US8603899B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 25, 2012 |
| Grant date | Dec 10, 2013 |
| Priority date | — |
| Expiry date | Oct 25, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10K59/12
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
At present, a forming process of a base film through an amorphous silicon film is conducted in respective film forming chambers in order to obtain satisfactory films. When continuous formation of the base film through the amorphous silicon film is performed in a single film forming chamber with the above film formation condition, crystallization is not sufficiently attained in a crystallization process. By forming the amorphous silicon film using silane gas diluted with hydrogen, crystallization is sufficiently attained in the crystallization process even with the continuous formation of the base film through the amorphous silicon film in the single film forming chamber.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.