Method for producing single crystal SiC substrate and single crystal SiC substrate produced by the same
US8603901B2 · kind B2 · utility
Assignees
Inventors
Key dates
| Filing date | Oct 29, 2008 |
| Grant date | Dec 10, 2013 |
| Priority date | — |
| Expiry date | Jul 3, 2030 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02488
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method including a phosphorous ion introduction step for implanting phosphorous ions from a side of a surface Si layer into an SOI substrate in which the surface Si layer and an embedded oxide layer having a predetermined thickness are formed on an Si base material layer to convert the embedded oxide layer into a PSG layer to lower a softening point. An SiC forming step is performed by heating the SOI substrate having the PSG layer formed therein in an atmosphere of hydrocarbon-based gas to convert the surface Si layer into SiC. Thereafter, the resulting substrate is cooled to form a single crystal SiC layer on a surface thereof.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.