Maintaining mask integrity to form openings in wafers
US8603921B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 25, 2011 |
| Grant date | Dec 10, 2013 |
| Priority date | — |
| Expiry date | Aug 5, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76898
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
One or more openings in an organic mask layer deposited on a first insulating layer over a substrate are formed. One or more openings in the first insulating layer are formed through the openings in the organic mask using a first iodine containing gas. An antireflective layer can be deposited on the organic mask layer. One or more openings in the antireflective layer are formed down to the organic mask layer using a second iodine containing gas. The first insulating layer can be deposited on a second insulating layer over the substrate. One or more openings in the second insulating layer can be formed using a third iodine containing gas.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.