Backside illuminated image sensor device with refractive index dependent layer thicknesses and method of forming the same

US8604405B2 · kind B2 · utility

Assignee

• TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. · TW

Inventors

• Han-Chi Liu · Jinshanmian, TW
• Jeng-Shyan Lin · Tainan, TW
• Dun-Nian Yaung · Taipei, TW
• Jen-Cheng Liu · Baoshan, TW
• Wen-De Wang · Guoxing Township, TW
• Chun-Chieh Chuang · Tainan, TW

Key dates

• Filing date: Mar 31, 2009
• Grant date: Dec 10, 2013
• Expiry date: Jun 23, 2030

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10F77/337

Abstract

Provided is an image sensor device. The image sensor device includes a device substrate having a front side and a back side. The device substrate has a radiation-sensing region that can sense radiation that has a corresponding wavelength. The image sensor also includes a first layer formed over the front side of the device substrate. The first layer has a first refractive index and a first thickness that is a function of the first refractive index. The image sensor also has a second layer formed over the first layer. The second layer is different from the first layer and has a second refractive index and a second thickness that is a function of the second refractive index.