Patent · US Active

Phase-change memory element

US8604457B2 · kind B2 · utility

4Cited by
43References
39Claims
0Family size

Assignee

Inventors

Key dates

Filing dateNov 12, 2008
Grant dateDec 10, 2013
Priority date
Expiry dateJan 24, 2031

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH10N70/8828

Abstract

A phase-change memory element with an electrically isolated conductor is provided. The phase-change memory element includes: a first electrode and a second electrode; a phase-change material layer electrically connected to the first electrode and the second electrode; and at least two electrically isolated conductors, disposed between the first electrode and the second electrode, directly contacting the phase-change material layers.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.