Split-channel transistor and methods for forming the same

US8604518B2 · kind B2 · utility

Assignee

• TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. · TW

Inventors

• Krishna Kumar Bhuwalka · Suwon-si, KR
• Gerben Doornbos · Kessel-Lo, BE
• Matthias Passlack · Overijse, BE

Key dates

• Filing date: Nov 30, 2011
• Grant date: Dec 10, 2013
• Expiry date: Jan 27, 2032

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D62/824

Abstract

A Fin Field-Effect Transistor (FinFET) includes a fin, which includes a channel splitter having a first bandgap, and a channel including a first portion and a second portion on opposite sidewalls of the channel splitter. The channel has a second bandgap smaller than the first bandgap. A gate electrode includes a first portion and a second portion on opposite sides of the fin. A gate insulator includes a first portion between the first portion of the gate electrode and the first portion of the channel, and a second portion between the second portion of the gate electrode and the second portion of the channel.