Semiconductor device and method of manufacturing the same
US8604540B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 30, 2010 |
| Grant date | Dec 10, 2013 |
| Priority date | — |
| Expiry date | Dec 12, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/62
Abstract
A wide band gap semiconductor device having a JFET, a MESFET, or a MOSFET mainly includes a semiconductor substrate, a first conductivity type semiconductor layer, and a first conductivity type channel layer. The semiconductor layer is formed on a main surface of the substrate. A recess is formed in the semiconductor layer in such a manner that the semiconductor layer is divided into a source region and a drain region. The recess has a bottom defined by the main surface of the substrate and a side wall defined by the semiconductor layer. The channel layer has an impurity concentration lower than an impurity concentration of the semiconductor layer. The channel layer is formed on the bottom and the side wall of the recess by epitaxial growth.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.