Method of placing a semiconducting nanostructure and semiconductor device including the semiconducting nanostructure
US8604559B2 · kind B2 · utility
14Cited by
2References
17Claims
0Family size
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Key dates
| Filing date | Mar 31, 2011 |
| Grant date | Dec 10, 2013 |
| Priority date | — |
| Expiry date | Mar 31, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10K71/191
- WIPO fieldMicro-structural and nano-technology
- WIPO sectorChemistry
Abstract
A semiconductor device includes a bonding surface, a semiconducting nanostructure including one of a nanowire and a nanocrystal, which is formed on the bonding surface, and a source electrode and a drain electrode which are formed on the nanostructure such that the nanostructure is electrically connected to the source and drain electrodes.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.