Replaceable, precise-tracking reference lines for memory products
US8605520B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 22, 2010 |
| Grant date | Dec 10, 2013 |
| Priority date | — |
| Expiry date | Sep 22, 2030 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C2211/5634
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
Systems and methods to improve reliability of sensing operations of semiconductor memory arrays requiring reading references such as MRAM or any type of phase change memory (PCM), and to improve yield of the memory arrays have been achieved. The memory array is divided into multiple parts, such as sections or segments. Reference word lines or reference bit lines or both are deployed in each of the multiple parts. Thus, the distance between an accessed line and the correspondent reference line is reduced, and hence the parasitic parameter tracking capability is enhanced significantly. Additionally spare reference word lines or spare reference bit lines can be deployed in each of the multiple parts.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.