Semiconductor laser device and manufacturing method thereof
US8605769B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 6, 2005 |
| Grant date | Dec 10, 2013 |
| Priority date | — |
| Expiry date | Jun 24, 2027 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S2304/12
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A semiconductor laser device includes: a substrate having a principal plane; a photonic crystal layer having an epitaxial layer of gallium nitride formed on substrate in a direction in which principal plane extends and a low refractive index material having a refractive index lower than that of epitaxial layer; an n-type clad layer formed on substrate; a p-type clad layer formed on substrate; an active layer that is interposed between n-type clad layer and p-type clad layer and emits light when a carrier is injected thereinto; and a GaN layer that covers a region directly on photonic crystal layer. Thus, the semiconductor laser device can be manufactured without fusion.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.