Smart subfield method for E-beam lithography
US8609308B1 · kind B1 · utility
29Cited by
4References
20Claims
0Family size
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Key dates
| Filing date | May 31, 2012 |
| Grant date | Dec 17, 2013 |
| Priority date | — |
| Expiry date | Jun 15, 2032 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S430/143
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
The present disclosure provides a method of improving a layer to layer overlay error by an electron beam lithography system. The method includes generating a smart boundary of two subfields at the first pattern layer and obeying the smart boundary at all consecutive pattern layers. The same subfield is exposed by the same electron beam writer at all pattern layers. The overlay error caused by the different electron beam at different layer is improved.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.