Method for forming high-K metal gate device
US8609484B2 · kind B2 · utility
3Cited by
0References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Nov 12, 2009 |
| Grant date | Dec 17, 2013 |
| Priority date | — |
| Expiry date | Jan 24, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/691
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The present disclosure provides a method of fabricating a semiconductor device that includes providing a semiconductor substrate, forming a metal gate on the substrate, the metal gate having a first gate resistance, removing a portion of the metal gate thereby forming a trench; and forming a conductive structure within the trench such that a second gate resistance of the conductive structure and remaining portion of the metal gate is lower than the first gate resistance.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.