Phase change memory device and fabrication method thereof
US8609503B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jan 25, 2012 |
| Grant date | Dec 17, 2013 |
| Priority date | — |
| Expiry date | Mar 11, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N70/8828
Abstract
The manufacturing of a phase change memory device that includes a switching device, a bottom electrode contact in contact with the switching device and a porous spacer formed on the bottom electrode contact. The formed bottom electrode contact exposes a switching device on a semiconductor substrate which the switching device is formed in, forming an insulating layer on a resultant structure of the semiconductor substrate including the bottom electrode contact by using an insulating compound having materials with different atomic sizes, and forming an insulating spacer within the bottom electrode contact hole by selectively etching the insulating layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.