Preventing UBM oxidation in bump formation processes
US8609526B2 · kind B2 · utility
10Cited by
18References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jul 23, 2010 |
| Grant date | Dec 17, 2013 |
| Priority date | — |
| Expiry date | Aug 4, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/14
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of forming an integrated circuit structure includes forming a copper-containing seed layer on a wafer, and performing a descum step on an exposed surface of the copper-containing seed layer. The descum step is performed using a process gas including fluorine and oxygen. A reduction/purge step is then performed on the exposed surface of the copper-containing seed layer using a nitrogen-containing gas. A copper-containing layer is plated on the copper-containing seed layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.