P-type transparent conductive oxide for solar cell comprising molybdenum trioxide doped with indium
US8609981B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | May 10, 2011 |
| Grant date | Dec 17, 2013 |
| Priority date | — |
| Expiry date | Aug 20, 2031 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02E10/50
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A p-type transparent conductive oxide and a solar cell containing the p-type transparent conducting oxide, wherein the p-type transparent conductive oxide includes a molybdenum trioxide doped with an element having less than six valence electrons, the element is selected from the group consisting of alkali metals, alkaline earth metals, group III elements, group IV, group V, transition elements and their combinations. Doping an element having less than six valence electron results in hole number increase, and thus increasing the hole drift velocity, and making Fermi level closer to the range of p-type materials. Hence, a p-type transparent conductive material is generated. This p-type transparent conducting oxide not only has high electron hole drift velocity, low resistivity, but also reaches a transmittance of 88% in the visible wavelength range, and therefore it is very suitable to be used in solar cells.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.