Inventor · Changhua City, TW

Huan-Chieh Su

133Patents
4h-index
61Co-inventors
67Inventor score

Filing activity: Aug 20, 2008 → Jun 21, 2024

Most-cited inventions

PatentTitleAreaCited byStatus
US11222892B2 Backside power rail and methods of forming the same Electricity 10 Active
US9312186B1 Method of forming horizontal gate all around structure Electricity 7 Active
US11233005B1 Method for manufacturing an anchor-shaped backside via Electricity 6 Active
US11443987B2 Semiconductor devices with backside air gap dielectric Electricity 6 Active
US7858147B2 Interconnect structure and method of fabricating the same Emerging Cross-Sectional Technologies 4 Active
US11195930B1 Semiconductor devices with backside power rail and methods of fabrication thereof Electricity 4 Active
US10388771B1 Method and device for forming cut-metal-gate feature Electricity 4 Active
US11114529B2 Gate-all-around field-effect transistor device Electricity 3 Active
US10002796B1 Dual epitaxial growth process for semiconductor device Electricity 3 Active
US11349004B2 Backside vias in semiconductor device Electricity 3 Active
US11532713B2 Source/drain contacts and methods of forming same Electricity 3 Active
US11581224B2 Method for forming long channel back-side power rail device Electricity 3 Active
US11502201B2 Semiconductor device with backside power rail and methods of fabrication thereof Electricity 2 Active
US11456209B2 Spacers for semiconductor devices including a backside power rails Electricity 2 Active
US11450751B2 Integrated circuit structure with backside via rail Electricity 2 Active
US8609981B2 P-type transparent conductive oxide for solar cell comprising molybdenum trioxide doped with indium Emerging Cross-Sectional Technologies 2 Active
US10374058B2 Semiconductor device and method for manufacturing the same Electricity 2 Active
US11551969B2 Integrated circuit structure with backside interconnection structure having air gap Electricity 2 Active
US10930763B2 Method and device for forming metal gate electrodes for transistors Electricity 2 Active
US9786757B2 Method of forming horizontal gate all around structure Electricity 2 Active
US11482595B1 Dual side contact structures in semiconductor devices Electricity 1 Active
US11929413B2 Semiconductor device structure with metal gate stack Electricity 1 Active
US10679856B2 Fin field effect transistor (FinFET) device structure with insulating structure over fin isolation structure and method for forming the same Electricity 1 Active
US11658226B2 Backside gate contact Electricity 1 Active
US12009394B2 Source/drain contacts and methods of forming same Electricity 1 Active

Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.