Photosensitive integrated circuit equipped with a reflective layer and corresponding method of production

US8610048B2 · kind B2 · utility

Assignee

• STMicroelectronics SA

Inventors

• Jerome Alieu · L'Isle-d'Abeau, FR
• Simon Guillaumet · Grenoble, FR
• Christophe Legendre · Virandeville, FR
• Hughes Leininger · Crolles, FR
• Jean-Pierre Oddou · Grenoble, FR
• Marc Vincent · Charenton-le-Pont, FR

Key dates

• Filing date: Sep 22, 2011
• Grant date: Dec 17, 2013
• Expiry date: Sep 22, 2031

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10F39/805

Abstract

A method for producing a photosensitive integrated circuit including producing circuit control transistors, producing, above the control transistors, and between at least one upper electrode and at least one lower electrode, at least one photodiode, by amorphous silicon layers into which photons from incident electromagnetic radiation are absorbed, producing at least one passivation layer, between the lower electrode and the control transistors, and producing, between the control transistors and the external surface of the integrated circuit, a reflective layer capable of reflecting photons not absorbed by the amorphous silicon layers.