Stability enhancements in metal oxide semiconductor thin film transistors
US8610119B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 4, 2009 |
| Grant date | Dec 17, 2013 |
| Priority date | — |
| Expiry date | May 20, 2030 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D99/00
Abstract
A plasma hydrogenated region in the dielectric layer of a semiconductor thin film transistor (TFT) structure improves the stability of the TFT. The TFT is a multilayer structure including an electrode, a dielectric layer disposed on the electrode, and a metal oxide semiconductor on the dielectric. Exposure of the dielectric layer to a hydrogen containing plasma prior to deposition of the semiconductor produces a plasma hydrogenated region at the semiconductor-dielectric interface. The plasma hydrogenated region incorporates hydrogen which decreases in concentration from semiconductor/dielectric interface into the bulk of one or both of the dielectric layer and the semiconductor layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.