Homo-junction diode structures using fin field effect transistor processing
US8610241B1 · kind B1 · utility
31Cited by
1References
20Claims
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Key dates
| Filing date | Jun 12, 2012 |
| Grant date | Dec 17, 2013 |
| Priority date | — |
| Expiry date | Jun 12, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/221
Abstract
Diodes and bipolar junction transistors (BJTs) are formed in IC devices that include fin field-effect transistors (FinFETs) by utilizing various process steps in the FinFET formation process. The diode or BJT includes an isolated fin area and fin array area having n-wells having different depths and a p-well in a portion of the fin array area that surrounds the n-well in the isolated fin area. The n-wells and p-well for the diodes and BJTs are implanted together with the FinFET n-wells and p-wells.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.