Magnetic etch-stop layer for magnetoresistive read heads
US8611055B1 · kind B1 · utility
165Cited by
20References
11Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jul 31, 2009 |
| Grant date | Dec 17, 2013 |
| Priority date | — |
| Expiry date | Apr 12, 2032 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11B5/3929
- WIPO fieldAudio-visual technology
- WIPO sectorElectrical engineering
Abstract
A method of producing a magnetoresistive read head and a tunneling magnetoresistive read head produced thereby are disclosed. A shield layer is provided. A magnetic etch-stop layer is formed over the shield layer, where the magnetic etch-stop layer comprises a nonmagnetic metal and a soft magnetic material with overall property still being magnetically soft. A sensor stack is formed over the magnetic etch-stop layer. A patterned mask layer is formed over the sensor stack. Material from a portion of the sensor stack not covered by the patterned mask is removed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.