Method for manufacturing liquid discharge head substrate
US8613862B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 3, 2008 |
| Grant date | Dec 24, 2013 |
| Priority date | — |
| Expiry date | Apr 23, 2031 |
Classification
- Technology area (CPC B)Performing Operations; Transporting
- CPC primaryB41J2/1645
- WIPO fieldTextile and paper machines
- WIPO sectorMechanical engineering
Abstract
A manufacturing method, for a liquid discharge head substrate that includes a silicon substrate in which a liquid supply port is formed, includes the steps of: preparing the silicon substrate, on one face of which a mask layer, in which an opening has been formed, is deposited; forming a first recessed portion in the silicon substrate, so that the recessed portion is extended through the opening from the one face of the silicon substrate to the other, reverse face of the silicon substrate; forming a second recessed portion by performing wet etching for the substrate, via the first recessed portion, using the mask layer; and performing dry etching for the silicon substrate in a direction from the second recessed portion to the other face.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.