Liner-free tungsten contact
US8614107B2 · kind B2 · utility
8Cited by
8References
7Claims
0Family size
Assignee
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Key dates
| Filing date | Feb 18, 2013 |
| Grant date | Dec 24, 2013 |
| Priority date | — |
| Expiry date | Feb 18, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
An electrical structure comprises a dielectric layer present on a semiconductor substrate. A contact opening is present through the dielectric layer. A nickel-tungsten alloy silicide is formed over the semiconductor substrate within the contact opening. A tungsten-containing nucleation layer formed within the contact opening covers the nickel-tungsten alloy silicide and at least a portion of a sidewall of the contact opening. A tungsten contact is formed within the contact opening and separated from the nickel-tungsten alloy silicide and at least a portion of the sidewall by the tungsten-containing nucleation layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.