Manufacturing method of semiconductor device
US8614138B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Aug 22, 2012 |
| Grant date | Dec 24, 2013 |
| Priority date | — |
| Expiry date | Aug 22, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/0227
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
According to one embodiment, a manufacturing method of a semiconductor device includes forming a lower mask film on a semiconductor substrate. The method includes forming a barrier film in a first area. The method includes forming an upper mask film. The method includes removing an upper mask member and leaving a lower mask member in the first area and removing the upper mask member and the lower mask member in the second area. The removing is performed by etching in a condition in which an etching rate of the upper mask member and an etching rate of the lower mask member are higher than that of the barrier member. The method includes forming a conductive film. The method includes selectively removing the conductive film by performing etching in a condition in which an etching rate of the conductive film is higher than that of the lower mask member.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.