Method of etching a high aspect ratio contact
US8614151B2 · kind B2 · utility
16Cited by
20References
28Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jan 4, 2008 |
| Grant date | Dec 24, 2013 |
| Priority date | — |
| Expiry date | Jan 24, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/31116
- WIPO fieldBasic materials chemistry
- WIPO sectorChemistry
Abstract
Methods and an etch gas composition for etching a contact opening in a dielectric layer are provided. Embodiments of the method use a plasma generated from an etch gas composed of C4F8 and/or C4F6, an oxygen source, and a carrier gas in combination with tetrafluoroethane (C2F4) or a halofluorocarbon analogue of C2F4.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.