Nitride-based semiconductor device and method for manufacturing the same
US8614464B2 · kind B2 · utility
2Cited by
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8Claims
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Key dates
| Filing date | Mar 16, 2011 |
| Grant date | Dec 24, 2013 |
| Priority date | — |
| Expiry date | Mar 20, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/038
Abstract
Disclosed herein are a nitride-based semiconductor device and a method for manufacturing the same. The nitride-based semiconductor device includes: a base substrate having a front surface and a rear surface opposite to the front surface; an epitaxial growth film formed on the front surface of the base substrate; a semiconductor layer formed on the rear surface of the base substrate; and an electrode structure body provided on the epitaxial growth film.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.