Power MOSFET with integrated gate resistor and diode-connected MOSFET
US8614480B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 3, 2012 |
| Grant date | Dec 24, 2013 |
| Priority date | — |
| Expiry date | Jul 3, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/62
Abstract
A power MOSFET is formed in a semiconductor device with a parallel combination of a shunt resistor and a diode-connected MOSFET between a gate input node of the semiconductor device and a gate of the power MOSFET. A gate of the diode-connected MOSFET is connected to the gate of the power MOSFET. Source and drain nodes of the diode-connected MOSFET are connected to a source node of the power MOSFET through diodes. The drain node of the diode-connected MOSFET is connected to the gate input node of the semiconductor device. The source node of the diode-connected MOSFET is connected to the gate of the power MOSFET. The power MOSFET and the diode-connected MOSFET are integrated into the substrate of the semiconductor device so that the diode-connected MOSFET source and drain nodes are electrically isolated from the power MOSFET source node through a pn junction.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.