Three dimensional semiconductor memory device and method of fabricating the same
US8614511B2 · kind B2 · utility
3Cited by
0References
5Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | May 6, 2011 |
| Grant date | Dec 24, 2013 |
| Priority date | — |
| Expiry date | Jun 19, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B43/40
Abstract
Provided are a three dimensional semiconductor memory device and a method of fabricating the same. The method includes forming a stepwise structure by using mask patterns and a sacrificial mask pattern formed on the mask patterns as a consumable etch mask.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.