Methods and apparatus for atomic layer etching
US8617411B2 · kind B2 · utility
551Cited by
8References
19Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Jul 20, 2011 |
| Grant date | Dec 31, 2013 |
| Priority date | — |
| Expiry date | Jan 19, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J2237/334
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
Substrate processing systems and methods for etching an atomic layer are disclosed. The methods and systems are configured to introducing a first gas into the chamber, the gas being an etchant gas suitable for etching the layer and allowing the first gas to be present in the chamber for a period of time sufficient to cause adsorption of at least some of the first gas into the layer. The first gas is substantially replaced in the chamber with an inert gas, and metastables are then generated from the inert gas to etch the layer with the metastables while substantially preventing the plasma charged species from etching the layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.