Method of using nitrogen based compounds to reduce contamination in beam-induced thin film deposition
US8617668B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 23, 2009 |
| Grant date | Dec 31, 2013 |
| Priority date | — |
| Expiry date | Sep 23, 2029 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC23C14/5873
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A method of depositing a material on a work piece surface. The method comprising providing a deposition precursor gas at the work piece surface; providing a purification compound including a nitrogen-containing compound at the work piece surface; and directing a beam toward a local region on the work piece surface, the beam causing decomposition of the precursor gas to fabricate a deposit on the work piece surface, the deposited material including a contaminant, the purification compound causing a reduction in the concentration of the contaminant and providing a deposited material that includes less contamination than a material deposited using the same methodology but without using a purification compound.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.