Method for finishing a substrate of the semiconductor-on-insulator type
US8617962B2 · kind B2 · utility
2Cited by
3References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Mar 14, 2011 |
| Grant date | Dec 31, 2013 |
| Priority date | — |
| Expiry date | Mar 14, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02087
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The invention relates to finishing a substrate of the semiconductor-on-insulator (SeOI) type comprising an insulator layer buried between two semiconducting material layers. The method successively comprises routing the annular periphery of the substrate so as to obtain a routed substrate, and encapsulating the routed substrate so as to cover the routed side edge of the buried insulator layer by means of a semiconducting material.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.