Patent · US Active

Fin removal method

US8617996B1 · kind B1 · utility

109Cited by
1References
20Claims
0Family size

Assignee

Inventors

Key dates

Filing dateJan 10, 2013
Grant dateDec 31, 2013
Priority date
Expiry dateJan 10, 2033

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH10D84/038
  • WIPO fieldSemiconductors
  • WIPO sectorElectrical engineering

Abstract

Methods for removal of fins from a semiconductor structure are provided. A fin liner is applied to the fins. The fin liner is then removed from the fins that are to be removed. The fin liner is of a material that is selective compared to the semiconductor fins. Hence, the fins can be removed without significant damage to the fin liner. The subsets of fins that are to be removed are then removed, while the fin liner protects the adjacent fins that are to be kept.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.