Back-illuminated CMOS image sensors
US8618458B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 7, 2008 |
| Grant date | Dec 31, 2013 |
| Priority date | — |
| Expiry date | Jan 23, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F39/8063
Abstract
A back-illuminated image sensor includes a sensor layer disposed between an insulating layer and a circuit layer electrically connected to the sensor layer. An imaging area includes a plurality of photodetectors is formed in the sensor layer and a well that spans the imaging area. The well can be disposed between the backside of the sensor layer and the photodetectors, or the well can be a buried well formed adjacent to the backside of the sensor layer with a region including formed between the photodetectors and the buried well. One or more side wells can be formed laterally adjacent to each photodetector. The dopant in the well has a segregation coefficient that causes the dopant to accumulate on the sensor layer side of an interface between the sensor layer and the insulating layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.