Junction gate field effect transistor structure having n-channel

US8618583B2 · kind B2 · utility

Assignee

• International Business Machines Corporation · US

Inventors

• Panglijen Candra · South Burlington, US
• Richard A. Phelps · Colchester, US
• Robert M. Rassel · Colchester, US
• Yun Shi · South Burlington, US

Key dates

• Filing date: May 16, 2011
• Grant date: Dec 31, 2013
• Expiry date: Nov 17, 2031

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D62/357

Abstract

The disclosure relates generally to junction gate field effect transistor (JFET) structures and methods of forming the same. The JFET structure includes a p-type substrate having a p-region therein; an n-channel thereunder; and n-doped enhancement regions within the n-channel, each n-doped enhancement region separated from the p-region.