Patent · US Active

Power MOSFET semiconductor device

US8618598B2 · kind B2 · utility

9Cited by

5References

5Claims

0Family size

Assignee

Infineon Technologies Austria AG · AT

Inventors

Oliver Haeberlen · Villach, AT
Joachim Krumrey · Eisenlohrsweg, AT
Franz Hirler · Isen, DE
Walter Rieger · Arnoldstein, AT

Key dates

Filing date	Jul 15, 2011
Grant date	Dec 31, 2013
Priority date	—
Expiry date	Jul 15, 2031

Classification

Technology area (CPC H)Electricity
CPC primaryH10D64/667
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

A semiconductor device includes a source metallization, a source region of a first conductivity type in contact with the source metallization, a body region of a second conductivity type which is adjacent to the source region. The semiconductor device further includes a first field-effect structure including a first insulated gate electrode and a second field-effect structure including a second insulated gate electrode which is electrically connected to the source metallization. The capacitance per unit area between the second insulated gate electrode and the body region is larger than the capacitance per unit area between the first insulated gate electrode and the body region.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.