Patent · US Active

Semiconductor structure, semiconductor device having a semiconductor structure, and method for manufacturing a semiconductor structure

US8618639B2 · kind B2 · utility

0Cited by

0References

10Claims

0Family size

Assignee

Infineon Technologies Austria AG · AT

Inventors

Mathias Plappert · Finkenstein, AT
Hans-Joachim Schulze · Taufkirchen, DE

Key dates

Filing date	May 16, 2012
Grant date	Dec 31, 2013
Priority date	—
Expiry date	May 16, 2032

Classification

Technology area (CPC H)Electricity
CPC primaryH01L2924/0002
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

According to an embodiment, a semiconductor structure includes a first monocrystalline semiconductor portion having a first lattice constant in a reference direction; a second monocrystalline semiconductor portion having a second lattice constant in the reference direction, which is different to the first lattice constant, on the first monocrystalline semiconductor portion; and a metal layer formed on and in contact with the second monocrystalline semiconductor portion.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.