Mathias Plappert
10Patents
2h-index
26Co-inventors
46Inventor score
Filing activity: May 16, 2012 → Dec 21, 2020
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US9209109B2 | IGBT with emitter electrode electrically connected with an impurity zone | Electricity | 5 | Active |
| US9355958B2 | Semiconductor device having a corrosion-resistant metallization and method for manufacturing thereof | Electricity | 4 | Active |
| US9793184B2 | Sensor for a semiconductor device | Electricity | 1 | Active |
| US8618639B2 | Semiconductor structure, semiconductor device having a semiconductor structure, and method for manufacturing a semiconductor structure | Electricity | 0 | Active |
| US11195713B2 | Methods of forming a silicon-insulator layer and semiconductor device having the same | Electricity | 0 | Active |
| US12046509B2 | Semiconductor device protection using an anti-reflective layer | Electricity | 0 | Active |
| US10361096B2 | Semiconductor component, method for processing a substrate and method for producing a semiconductor component | Electricity | 0 | Active |
| US10453806B2 | Methods for forming semiconductor devices and semiconductor device | Electricity | 0 | Active |
| US10199291B2 | Sensor for a semiconductor device | Electricity | 0 | Active |
| US8883609B2 | Method for manufacturing a semiconductor structure | Electricity | 0 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.