Patent · US Active

System and method of transistor switch biasing in a high power semiconductor switch

US8618860B2 · kind B2 · utility

1Cited by

8References

20Claims

0Family size

Assignee

SiGe Semiconductor, Inc. · CA

Inventors

Lui LAM · Winchester, US
Hanching Fuh · Brookline, US

Key dates

Filing date	Dec 10, 2012
Grant date	Dec 31, 2013
Priority date	—
Expiry date	Dec 10, 2032

Classification

Technology area (CPC H)Electricity
CPC primaryH03K2217/0018
WIPO fieldBasic communication processes
WIPO sectorElectrical engineering

Abstract

A circuit and method are provided for switching in a semiconductor based high power switch. Complementary p-type based transistors are utilized along insertion loss insensitive paths allowing biasing voltages to alternate between supply and ground, allowing for negative voltage supplies and blocking capacitors to be dispensed with, while improving performance.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.