High operating speed resistive random access memory
US8619459B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | May 25, 2012 |
| Grant date | Dec 31, 2013 |
| Priority date | — |
| Expiry date | May 25, 2032 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C2213/79
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
Providing for resistive random access memory (RRAM) having high read speeds is described herein. By way of example, a RRAM memory can be powered at one terminal by a bitline, and connected at another terminal to a gate of a transistor having a low gate capacitance (relative to a capacitance of the bitline). With this arrangement, a signal applied at the bitline can quickly switch the transistor gate, in response to the RRAM memory being in a conductive state. A sensing circuit configured to measure the transistor can detect a change in current, voltage, etc., of the transistor and determine a state of the RRAM memory from the measurement. Moreover, this measurement can occur very quickly due to the low capacitance of the transistor gate, greatly improving the read speed of RRAM.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.