Driving circuit for memory device
US8619489B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 27, 2011 |
| Grant date | Dec 31, 2013 |
| Priority date | — |
| Expiry date | Nov 6, 2031 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C16/12
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
An electrically programmable non-volatile memory device is proposed. The memory device includes a plurality of memory cells and a driver circuit for driving the memory cells; the driver circuit includes programming means for providing a first programming voltage and a second programming voltage to a set of selected memory cells for programming the selected memory cells; the first programming voltage requires a first transient period for reaching a first target value thereof. In the solution according to an embodiment of the present invention, the programming means includes means for maintaining the second programming voltage substantially equal to the first programming voltage during a second transient period being required by the second programming voltage to reach a second target value thereof.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.