Enrico Castaldo
16Patents
4h-index
21Co-inventors
60Inventor score
Filing activity: Mar 4, 2003 → Aug 17, 2023
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US7403405B2 | Low-consumption regulator for a charge pump voltage generator and related system and method | Electricity | 14 | Expired |
| US6774709B2 | Voltage regulator for a charge pump circuit | Emerging Cross-Sectional Technologies | 11 | Expired |
| US7602230B2 | Control integrated circuit for a charge pump | Physics | 4 | Active |
| US7321516B2 | Biasing structure for accessing semiconductor memory cell storage elements | Physics | 4 | Expired |
| US8406068B2 | Voltage shifter for high voltage operations | Electricity | 3 | Active |
| US7403441B2 | Power management unit for a flash memory with single regulation of multiple charge pumps | Physics | 2 | Active |
| US8385135B2 | Low consumption voltage regulator for a high voltage charge pump, voltage regulation method, and memory device provided with the voltage regulator | Electricity | 2 | Active |
| US10127966B2 | Reading circuit with a shifting stage and corresponding reading method | Physics | 0 | Active |
| US7580289B2 | Discharge circuit for a word-erasable flash memory device | Physics | 0 | Active |
| US10281512B2 | Testing circuit of a longtime-constant circuit stage and corresponding testing method | Physics | 0 | Active |
| US11615857B2 | Method for writing in a non-volatile memory according to the ageing of the memory cells and corresponding integrated circuit | Physics | 0 | Active |
| US12368433B2 | Electronic system, integrated circuit, and method for generating sequential signals | Electricity | 0 | Active |
| US10217503B2 | Reading circuit of a long time constant circuit stage and corresponding reading method | Physics | 0 | Active |
| US9093232B2 | Electronic switch for low-voltage and high switching speed applications | Emerging Cross-Sectional Technologies | 0 | Active |
| US8376237B2 | Method for biasing an EEPROM non-volatile memory array and corresponding EEPROM non-volatile memory device | Physics | 0 | Active |
| US8619489B2 | Driving circuit for memory device | Physics | 0 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.