Broad area laser having an epitaxial stack of layers and method for the production thereof

US8619833B2 · kind B2 · utility

Assignee

• OSRAM Opto Semiconductors GmbH · DE

Inventors

• Alfred Lell · Maxhütte-Haidhof, DE
• Stefanie Rammelsberger · Zeitlarn, DE

Key dates

• Filing date: Jun 28, 2010
• Grant date: Dec 31, 2013
• Expiry date: Jun 28, 2030

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01S5/4081
• WIPO field: Optics
• WIPO sector: Instruments

Abstract

A broad stripe laser (1) comprising an epitaxial layer stack (2), which contains an active, radiation-generating layer (21) and has a top side (22) and an underside (23). The layer stack (2) has trenches (3) in which at least one layer of the layer stack (2) is at least partly removed and which lead from the top side (22) in the direction of the underside (23). The layer stack (2) has on the top side ridges (4) each adjoining the trenches (3), such that the layer stack (2) is embodied in striped fashion on the top side. The ridges (4) and the trenches (3) respectively have a width (d1, d2) of at most 20 μm.